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Method for Single Crystal Growth of Barium Titanate and Barium Titanate Solid Solution

机译:钛酸钡和钛酸钡固溶体单晶生长的方法

摘要

The present invention relates to a single crystal growth method of the barium titanate (BaTiO 3) and barium titanate solid solution ((Ba x M 1-x ) (Ti y N 1-y) O 3). Barium titanate and a single crystal growth method of the barium titanate solid solution according to the present invention, how the single crystal growth of the barium titanate and a barium titanate solid solution with the abnormal grain growth phenomena of the primary and secondary thus eseona above a certain temperature or the like the composition and the heat treatment atmosphere of the crystal in, by sintering the barium titanate powder in a reducing atmosphere is the abnormal grain growth is inhibited barium preparing the crystals (a); The method comprising the manufacture of the crystals and bonding the seed (seed) single crystal (b); And it is the temperature, composition and the atmosphere adjustment so that abnormal grain growth sheets up from the junction with the seed crystals of the single crystal, the seed single crystal is characterized in that it comprises a step (c) to continue growing into the crystals. According to the present invention, since a special device it can be produced barium titanate and a single crystal of barium titanate solid solution with only common heat treatment process without the need to have the advantage of being economically mass-produce a single crystal. Barium titanate and a single crystal growth method of the barium titanate solid solution according to the present invention may be applied to other systems it takes place sheets of abnormal grain growth.
机译:本发明涉及钛酸钡(BaTiO 3)和钛酸钡固溶体 ((Ba x M 1-x )(Ti y N 1-y)O 3)。根据本发明的钛酸钡和钛酸钡固溶体的单晶生长方法,如何使钛酸钡和钛酸钡固溶体的单晶生长具有一次生和二次生的异常晶粒生长现象,从而使硒酸钠高于通过在还原气氛中烧结钛酸钡粉末,在一定温度或类似温度的晶体组成和热处理气氛中,抑制钡的异常晶粒生长,从而制得晶体(a);该方法包括制造晶体并结合种子(种子)单晶(b);并且是温度,组成和气氛调节,使得异常晶粒生长从与单晶的籽晶的结合处向上张开,籽晶的特征在​​于其包括步骤(c),以继续生长到单晶。晶体。根据本发明,由于是特殊的装置,因此仅通过通常的热处理工序就可以制造钛酸钡和钛酸钡固溶体的单晶,而不必具有经济地大量生产单晶的优点。根据本发明的钛酸钡和钛酸钡固溶体的单晶生长方法可以应用于发生异常晶粒生长片的其他系统。

著录项

  • 公开/公告号KR100375551B1

    专利类型

  • 公开/公告日2003-03-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20000020620

  • 发明设计人 이호용;이병기;강석중;정성윤;

    申请日2000-04-19

  • 分类号C30B29/32;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:37

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