Electromigration-resistant metallization for interconnecting microcircuits with RF reactive sputtered titanium tungsten and gold

摘要

Two metallization structures of PtSi / TiW / TiW (N) / Au (Type I) and PtSi / TiW / TiW (N) / TiW / Au (Type II) and the processes involved are described with respect to microcircuit interconnection. . Metallization structures and processes may be IC interconnected with metal pitches as small as 1.5 μm or less. The metallized structure is reliable for continuous high temperature and high power operation.