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Electromigration resistant metallization process microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold
Electromigration resistant metallization process microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold
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机译:射频反应溅射钛钨和金的抗电迁移金属化工艺微电路互连
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摘要
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 . mu.m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
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