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Ag or Ag-alloy plated Lead frame for semiconductor package and the method of manufacturing the same

机译:用于半导体封装的镀银或镀银合金的引线框架及其制造方法

摘要

PURPOSE: A lead frame for semiconductor package using silver plating or silver alloy plating and a method for fabricating the same are provided to reduce a manufacturing cost and prevent generation of cracks by using a small quantity of high-priced palladium-plated layer. CONSTITUTION: A nickel-plated layer(42) is formed on an upper portion of a metallic substrate(41). The nickel-plated layer(42) is formed with nickel or nickel alloy. A gold-plated layer(43) is formed on an upper portion of the nickel alloy-plated layer(42). The gold-plated layer(43) is formed with gold or silver. A silver-plated layer(44) is formed on an upper portion of the gold-plated layer(43). The nickel-plated layer(42) is used for preventing a diffusion phenomenon and an oxidation phenomenon of a base metal included in the metallic substrate(41) to an external plated layer. The gold-plated layer(43) is used for preventing the diffusion phenomenon and the oxidation phenomenon of the nickel-plated layer(42). The silver-plated layer(44) is used for maintaining characteristics of the lower plated layers(43,42).
机译:目的:提供一种用于使用银镀层或银合金镀层的半导体封装的引线框及其制造方法,以通过使用少量的高价钯镀层来降低制造成本并防止产生裂纹。构成:在金属基板(41)的上部形成了镀镍层(42)。镀镍层(42)由镍或镍合金形成。在镍合金镀层(42)的上部上形成镀金层(43)。镀金层(43)由金或银形成。在镀金层(43)的上部形成有镀银层(44)。镀镍层(42)用于防止金属基板(41)中所含的贱金属向外镀层的扩散现象和氧化现象。镀金层(43)用于防止镀镍层(42)的扩散现象和氧化现象。镀银层(44)用于保持下镀层(43,42)的特性。

著录项

  • 公开/公告号KR100378489B1

    专利类型

  • 公开/公告日2003-03-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010013667

  • 申请日2001-03-16

  • 分类号H01L23/495;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:32

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