A method for selective removal of foreign phases on surfaces of conductors chalcopyrite semiconductor sulfide-containing

摘要

Process for selectively removing impurity phases on the surfaces of sulfide-containing chalcopyrite semiconductors comprises electrochemically etching the impurity phases using an electrolyte having an alkaline pH value; immersing a sulfide-containing chalcopyrite semiconductor sample having impurity phases on its surface into the electrolyte; and applying a potential between the measuring electrode and the counter electrode. Preferred Features: An aqueous solution of potassium sulfate having a concentration of 0.1 M and a pH of at least 10 is used as electrolyte in a three electrode cell containing a measuring electrode, counter electrode and reference electrode, and the potential is cyclically determined several times opposite the reference electrode in a determined region.