Structurization of photoresist, for producing integrated circuit, comprises exposing resist containing film-forming polymer with latent alkali-soluble groups and photobase generator, acid-catalyzed elimination and development

摘要

Photoresist structurization comprises: (1) preparing a substrate (partly) coated with photoresist; (2) selective exposure to light in suitable wavelength range; (3) contact with acid so that it diffuses into the photoresist; (4) heating to temperature causing acid-catalyzed elimination; and (5) development. Photoresist structurization comprises: (1) preparing a substrate (partly) coated with photoresist containing (aa) film-forming polymer with groups converted to alkali-soluble groups by acid-catalyzed elimination and (ab) photobase generator releasing base on exposure to light from a definite wavelength range; (2) selective exposure to such light; (3) contact with acid for a certain time, so that the acid diffuses into the photoresist; (4) heating to a temperature at which acid-catalyzed elimination occurs; and (5) development.