首页> 外国专利> Test circuit for synchronous integrated circuits, especially memory (DRAM) chips whereby test errors due to signal transfer time differences are minimized and the circuit is insensitive to signal voltage potential variations

Test circuit for synchronous integrated circuits, especially memory (DRAM) chips whereby test errors due to signal transfer time differences are minimized and the circuit is insensitive to signal voltage potential variations

机译:同步集成电路的测试电路,尤其是内存(DRAM)芯片,可将由于信号传输时间差异而导致的测试错误降至最低,并且该电路对信号电压电位变化不敏感

摘要

Test circuit for a DUT comprises: (a) a test data generator (15) that generates reference test data as commanded by a control signal (b) a data output driver (25) for output of the generated reference test data and its delivery via a differential data bus to the DUT (c) a data input circuit for receipt of data from the DUT (d) a comparator circuit for comparison of the data from the DUT with the reference data to determine if it is operating correctly (e) whereby the data conducting pair (31, 36) of the differential data bus are configured to minimize signal transfer time differences. The differential data bus has one line carrying the data signal and the other the inverted signal with bus designed to minimize signal transfer time differences along the two lines.
机译:用于DUT的测试电路包括:(a)测试数据生成器(15),该测试数据生成器(15)根据控制信号的命令生成参考测试数据(b)数据输出驱动器(25),用于输出生成的参考测试数据并通过到DUT的差分数据总线(c)用于从DUT接收数据的数据输入电路(d)比较器电路,用于将DUT的数据与参考数据进行比较,以确定其是否正常运行(e)差分数据总线的数据传导对(31、36)被配置为最小化信号传输时间差。差分数据总线的一条线路传输数据信号,另一条传输的是反相信号,总线设计为可最大程度地减少两条线路之间的信号传输时间差异。

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