Planarization of semiconductor structure involves providing second area on layer to be planarized that is continuously masked using pre-planarizing mask

摘要

The method involves applying a layer to be planarized over the semiconducting structure with recesses corresponding to trench regions. The substructures have a second sub-structure with second trench regions and the applied layer has further recesses above the second trench regions. A pre- planarizing mask masks a second area on the layer to be planarized above the second sub-structure.