Lateral pin diode and manufacturing process has separated p and n regions on a substrate with a region of lower dopant concentration between them

摘要

A process for making a lateral PIN diode comprises forming separated p (16) and n (18) regions on a substrate (14) and forming between these on the substrate a region (20) having a lower dopant concentration than either the p- or n- region. An Independent claim is also included for a PIN diode formed as above.