Method of manufacturing an integrated semiconductor circuit with a conductor structure embedded in the substrate in which the concentrations of dopant in overlapping regions are greatly varied by diffusion

摘要

The method involves providing a semiconductor substrate (10) and generating two connector regions (14,16). A provisional structure (12) for the conductor structure is formed embedded in the substrate and between the two connector regions. The provisional structure does not form any electrically conductive connections or only a connection with very low electrical conductivity. Energy is then locally provided to the provisional structure to convert the structure into a conductor structure. The conductor structure forms a connection between the connector regions which is more conductive than any connection formed by the provisional structure. The provisional structure is generated by forming a p-doped region and an n-doped region which overlaps the p-doped region. The p-doping and the n-doping in the region of overlap compensate each other for the local application of energy so that no free charge carriers are present. The provisional structure is converted into the conductive structure in that the concentrations of dopants in the overlapping region are greatly varied, to different extents, by diffusion. Independent claims also cover an integrated circuit made according to the method.