Production of substrate used in the manufacture of semiconductor structure especially HBT cell comprises structuring substrate to form recess in the surface, growing a layer sequence, and planarizing the substrate and/or the layer sequence

摘要

Production of a substrate (100) comprises structuring a substrate to form a recess (106) in the substrate surface (104); growing a layer sequence (112) on the structured surface; and planarizing the substrate and/or the layer sequence to expose a layer lying lower in the layer sequence in a region outside of the recess. Preferred Features: A recess having a first section (108) of a first depth and a second section (110) of a second depth is formed in the first step. A protective layer (122) is formed on the layer sequence. Planarizing comprises thinning the substrate and/or the layer sequence.