Production of an integrated DMOS transistor arrangement comprises using a mask region, forming body reinforcing regions, isotropically back etching the mask region, and extending the contact holes

摘要

Production of an integrated DMOS transistor arrangement comprises using a mask region (M) having minimally extending contact holes (K) which correspond to the minimal structural size of the structuring technique, forming body reinforcing regions (BV), isotropically back etching the mask region, extending the contact holes, and contacting with conducting material by filling the holes. Preferred Features: The contact holes are filled to form a contact of a body region and a source region of a transistor device. The contact holes are formed using electromagnetic radiation and/or particle radiation.