首页> 外国专利> Process for forming contact holes in contact regions of components integrated in a substrate comprises applying an insulating layer on a substrate with the integrated components, and applying a mask with openings

Process for forming contact holes in contact regions of components integrated in a substrate comprises applying an insulating layer on a substrate with the integrated components, and applying a mask with openings

机译:在集成于基板中的部件的接触区域中形成接触孔的方法包括:在具有集成部件的基板上施加绝缘层,以及施加具有开口的掩模

摘要

Process for forming contact holes in a number of contact regions of components integrated in a substrate comprises applying an insulating layer onto a substrate (5) with the integrated components; and applying a mask (M) with openings (01, 02, 03) on the sites on which contact holes are to be formed. The contact holes defined by the openings of the mask are etched using a mask. Preferred Features: Etching of part of the contact holes is carried out in two partial etching steps. In the first etching step, the insulating layer is etched up to an insulating layer covering the contact regions. In the second etching step, the insulating layer is removed to expose the contact regions so that the contact holes penetrate the contact holes and the insulating layer and extend up to contact regions located below the insulating layer.
机译:在集成在基板中的部件的多个接触区域中形成接触孔的方法包括:将绝缘层施加到具有集成部件的基板(5)上;在要形成接触孔的位置上涂上具有开口(01、02、03)的掩模(M)。使用掩模蚀刻由掩模的开口限定的接触孔。优选特征:在两个部分蚀刻步骤中进行部分接触孔的蚀刻。在第一蚀刻步骤中,将绝缘层蚀刻至覆盖接触区域的绝缘层。在第二蚀刻步骤中,去除绝缘层以暴露接触区域,使得接触孔穿透接触孔和绝缘层并向上延伸至位于绝缘层下方的接触区域。

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