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Floating gate storage cell used in the production of a switching circuit arrangement comprises source/drain regions and a floating gate layer made from a conducting material
Floating gate storage cell used in the production of a switching circuit arrangement comprises source/drain regions and a floating gate layer made from a conducting material
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机译:用于生产开关电路装置的浮栅存储单元包括源/漏区和由导电材料制成的浮栅层
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摘要
Floating gate storage cell comprises source/drain regions (101, 102) and a floating gate layer (105) made from a metallic conducting material; and a channel region (103) made from an electrically insulating material. An Independent claim is also included for a process for the production of a floating gate storage cell. Preferred Features: The floating gate storage cell has a first layer containing a channel region arranged between source/drain regions, a first dielectric layer on the first layer, a floating gate layer, a second dielectric layer, and a control gate electrode layer on the second dielectric layer.
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