lithography methods to the reduction of the lateral chromium structure loss in the case of the photoresist masks production using chemically amplified resists

摘要

The present invention relates to a process for the preparation of photomasks. In this case, on a silica substrate coated with chromium a film composed of a photoresist is applied, as it is used for the structuring of semiconductor substrates is used, for example, a carl - resist. The photoresist layer is described with a focused electron beam, and then developed. The now structured resist is treated with a after amplification agent and, as a result, in an increased etch resistance with respect to an oxygen plasma. In the case of an etching of the exposed chromium sections, the silicon which is introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. As a result, the with the electron beam inscribed structure in the chromium layer to be transmitted without loss.