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Filling vertically-channeled structures during manufacture of semiconductor components, employs stages of introduction with intervening barrier formation
Filling vertically-channeled structures during manufacture of semiconductor components, employs stages of introduction with intervening barrier formation
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机译:在半导体组件制造过程中填充垂直通道结构,采用引入阶段并形成势垒
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摘要
The filling material is introduced homogeneously into the trenches (1,2,3) in successive stages (I, III). Between these layer (15,16) -forming stages, a further stage (II) forms a barrier (11).
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