A method for removing pecvd (plasma-enhanced chemical vapor deposition) - residues fluorinated plasma with the use of in - situ - h φ 2 φ - plasma

摘要

In the case of a method of effecting the cleaning or chamber process control for the removal of residues of fluorinated discharges from the internal pecvd (plasma-enhanced chemical vapor deposition) - material during the production of a semiconductor or an integrated circuit, the improvement of the removing of the fluorinated discharges without opening the chamber and without effecting a chamber standstill time, comprising: dollars a a) maximizing the h - atomic concentration in a gas mixture of a h φ 2 containing φ plasma through the use of strong hf - power and a low pressure to obtain an in situ - h φ 2 φ - plasma and dollars a b) treating a reactor chamber, the construction of residues of a preceding chamber treatment with a fluorinated plasma contains, with the in situ - h φ 2 φ - plasma from step a) without opening the chamber and without switching off of the chamber for the removal of the construction of residues of the fluorinated plasma.