Laterally functioning bipolar transistor with a radically different structure to augment output current without augmentation of surface congestion

摘要

A laterally functioning bipolar transistor incorporates: (a) an emitter region (17) arranged in an insulated seat (11, 150) cut in a semiconductor substrate; (b) an extrinsic collector region (16) arranged in a second insulated seat (3, 150) cut in the semiconductor substrate (SB) and separated laterally from the first seat by a zone (20) of the substrate; (c) an intrinsic collector region situated in the separating zone in contact with the extrinsic collector region; (d) an intrinsic base region (100), which is finer laterally than vertically, situated in contact with the intrinsic collector region and the emitter region supported on the vertical side of the first seat situated opposite a vertical side of the second seat; (e) an extrinsic base region (60) extending perpendicular to the intrinsic base region in the upper part of the separating zone; (f) some contact studs respectively situated in contact with the extrinsic collector, emitter and extrinsic base regions. The intrinsic base region is formed in a silicon-germanium alloy. Independent claims are also included for: (a) an integrated circuit incorporating such a transistor; (b) a method for the fabrication of the laterally functioning bipolar transistor.