首页> 外国专利> Production of a hybrid photodetector array on a read circuit involves hybridization of a first substrate containing photodetectors and a second substrate containing a read circuit

Production of a hybrid photodetector array on a read circuit involves hybridization of a first substrate containing photodetectors and a second substrate containing a read circuit

机译:在读取电路上生产混合光电探测器阵列的过程包括将包含光电探测器的第一基板与包含读取电路的第二基板进行混合

摘要

Production of a hybrid photodetector array on a read circuit involves: forming photodetectors on a thin semiconducting layer (13); forming the read circuit on a second substrate (20); hybridization of the first and second substrates; and removal of the remaining part (11) of the first substrate (10) and obtaining a hybrid photodetector array on a read circuit. Production of a hybrid photodetector array on a read circuit involves: (a) forming photodetectors on a thin semiconducting layer (13) used for forming a photodetector array, the semiconducting layer (13), preferably made of silicon, being separated from the remaining part (11) of the first substrate (10) by a barrier layer (12) made of SiO2 (preferred), Si3N4 or diamond and preferably comprising at least two sub-layers, for thinning down the first substrate (10), and the photodetectors having bonding pads (18) for connection to the read circuit; (b) forming the read circuit comprising CMOS transistors, bipolar transistors or Bi-CMOS transistors on a second substrate having bonding pads for connection to the photodetectors; (c) hybridization of the first (10) and second substrates by electrical connections (30) comprising fusible metallic balls between the bonding pads of the substrates; and (d) removal of the remaining part (11) of the first substrate (10) by polishing and/or etching and obtaining a hybrid photodetector array on a read circuit after removing the remaining part (11) of the first substrate (10). After producing the hybrid photodetector array on a read circuit, at least one other layer is applied on the photodetector array in order to implement optical treatment of the surface. The other layer can be an antireflection layer or an optical filter layer. The area of the thin semiconducting layer in contact with barrier layer is preferably doped in order to form a common electrode for the photodetector array. Localized electrical connections are formed with the doped area across the barrier layer. The space between the electrical connections, separating the photodetector array from the read circuit, is filled with an electrically insulating material.
机译:在读取电路上生产混合光电探测器阵列的步骤包括:在薄半导体层(13)上形成光电探测器;在第二基板(20)上形成读取电路;第一和第二底物的杂交;去除第一基板(10)的其余部分(11),并在读取电路上获得混合光电探测器阵列。在读取电路上制造混合光电探测器阵列的步骤包括:(a)在用于形成光电探测器阵列的薄半导体层(13)上形成光电探测器,该半导体层(13)最好由硅制成,并与其余部分分开在第一基板(10)的(11)中设置有由SiO 2(优选),Si 3 N 4或金刚石制成的阻挡层(12),该阻挡层优选包括至少两个子层,用于减薄第一基板(10),以及光电探测器具有用于连接到读取电路的焊盘(18); (b)在第二基板上形成包括CMOS晶体管,双极晶体管或Bi-CMOS晶体管的读取电路,该第二基板具有用于连接至光电检测器的接合焊盘; (c)通过电连接(30)使第一基板(10)和第二基板杂交,所述电连接包括在基板的键合焊盘之间的可熔金属球; (d)通过抛光和/或蚀刻去除第一衬底(10)的剩余部分(11),并在去除第一衬底(10)的剩余部分(11)之后在读取电路上获得混合光电探测器阵列。 。在读取电路上产生混合光电探测器阵列之后,在光电探测器阵列上施加至少另一层,以便对表面进行光学处理。另一层可以是抗反射层或滤光器层。与掺杂层接触的薄半导体层的区域优选被掺杂,以便形成用于光电探测器阵列的公共电极。形成局部电连接,并且跨过阻挡层的掺杂区域。将光电探测器阵列与读取电路分开的电连接之间的空间充满了电绝缘材料。

著录项

  • 公开/公告号FR2833755A1

    专利类型

  • 公开/公告日2003-06-20

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR20020004615

  • 发明设计人 GIDON PIERRE;PANTIGNY PHILIPPE;

    申请日2002-04-12

  • 分类号H01L23/50;H01L31/101;

  • 国家 FR

  • 入库时间 2022-08-21 23:37:45

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