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Integrated circuit one time programming memory having series placed transistor/polycrystalline silicon programming resistor forming memory element with programming resistor not destroyed during programming.
Integrated circuit one time programming memory having series placed transistor/polycrystalline silicon programming resistor forming memory element with programming resistor not destroyed during programming.
The one time programmable memory cell has a programming transistor (MN) which is placed in series with a polycrystalline silicon programming resistor (Rp) forming the memory element. The programming does not destroy the polycrystalline silicon resistor.
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