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METHOD FOR MANUFACTURING RESISTANCE VARYING ELEMENT, METHOD FOR MANUFACTURING NONVOLATILE RESISTANCE VARYING MEMORY DEVICE, AND NONVOLATILE RESISTANCE VARYING MEMORY DEVICE
METHOD FOR MANUFACTURING RESISTANCE VARYING ELEMENT, METHOD FOR MANUFACTURING NONVOLATILE RESISTANCE VARYING MEMORY DEVICE, AND NONVOLATILE RESISTANCE VARYING MEMORY DEVICE
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机译:制造电阻变化元件的方法,制造非易失性变化存储器的方法以及非易失性变化的存储器
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摘要
PROBLEM TO BE SOLVED: To enhance the circuit yield of a nonvolatile resistance varying memory device, and to enhance memory performance.;SOLUTION: The method for manufacturing a resistance varying element comprises a step for preparing a silicon substrate, a step for forming a silicon oxide layer on the substrate, a step for forming a first metal layer of a metal selected from a group of platinum and iridium on the silicon oxide layer, a step for forming a thin perovskite metal oxide film on the first metal layer, a step for depositing a second metal layer of a metal selected from a group of platinum and iridium on the thin perovskite metal oxide film, a step for annealing a multilayer structure obtained by the step for depositing the second metal layer at a temperature of 400-700°C for 5 min. to 3 hours, and a step for varying resistance between the first metal layer and the second metal layer.;COPYRIGHT: (C)2004,JPO&NCIPI
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