METHOD FOR DEPOSITING ITO TRANSPARENT ELECTROCONDUCTIVE THIN FILM, ITO TRANSPARENT ELECTROCONDUCTIVE THIN FILM, TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, AND TOUCH PANEL

摘要

PROBLEM TO BE SOLVED: To provide an ITO transparent electroconductive thin film which can be crystallized by annealing at a low temperature in a short time after film deposition by sputtering.;SOLUTION: An ITO transparent electroconductive thin film 5 is deposited by a sputtering method using an ITO target in which the weight ratio of SnO₂ to the total of In₂O₃ and SnO₂ is ≤6%. Thus, crystallization can be caused by annealing at a low temperature in a short time, so that the ITO transparent electroconductive thin film having high strength and excellent mechanical durability can be prepared at a low temperature corresponding to the heat resistance of a substrate in a short time without deterioration in productivity. Further, the transparent electroconductive film can be obtained by depositing the ITO transparent electroconductive thin film 5 on a polymer film 4. A touch panel is provided with the same transparent electroconductive film.;COPYRIGHT: (C)2004,JPO