PACKAGE FOR POWER-AMPLIFICATION SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND POWER-AMPLIFICATION SEMICONDUCTOR DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To provide a package for a power-amplification semiconductor device, by which the warping of the whole semiconductor package resulting from thermal stress generated in a process with a high-temperature process such as the joining of a metallic solder material or the like is relaxed, and which has excellent heat-dissipation characteristics and high reliability, to provide its manufacturing method and the power-amplification semiconductor device using it.;SOLUTION: Both a base and a frame-shaped member, both the frame-shaped member and an insulating member and both the insulating member and a lead terminal are joined through a binding material in the package, the binding material is composed of the metallic solder material, and the base and the frame-shaped member are bonded through a stress buffer plate in the package. The coefficient of thermal expansion of the stress buffer plate is constituted at a value larger than that of the base.;COPYRIGHT: (C)2004,JPO