TOTAL REFLECTION FLUORESCENT X-RAY ANALYSIS METHOD, TOTAL REFLECTION FLUORESCENT X-RAY ANALYSIS PRETREATMENT DEVICE, AND TOTAL REFLECTION FLUORESCENT X-RAY ANALYZER

摘要

PPROBLEM TO BE SOLVED: To provide a total reflection fluorescent X-ray analysis method and a device for use in the same, which detect or quantitatively analyze a metal contaminant element on the surface of a silicon wafer at high sensitivity and which can accurately obtain the positional information thereof. PSOLUTION: The total reflection fluorescent X-ray analysis method for detecting the metal contaminant attached to the surface of the silicon wafer includes a step for heating an etching solution and for bringing the generated etching vapor into contact with the surface of the silicon wafer, a step for controlling the amount of the etching solution applied on the surface of the silicon wafer at a prescribed amount, a step for forming liquid droplets from the etching solution containing the metal contaminant, a step for drying the liquid droplets and for forming a fine particle-like residue by the metal contaminant, a step for irradiating the silicon wafer with X-rays and for detecting the fluorescent X-rays from the residue by the total reflection fluorescent X-ray analysis method, and a step for detecting the distribution of the metal contaminant on the surface of the silicon wafer by the detected position of the fluorescent X-rays. PCOPYRIGHT: (C)2004,JPO