首页> 外国专利> MANUFACTURING METHOD OF MOLD FOR PRODUCING V-GROOVE, MANUFACTURING METHOD OF V-GROOVE STRUCTURED GOODS USING THE MOLD AND OBTAINED V-GROOVE STRUCTURED GOODS

MANUFACTURING METHOD OF MOLD FOR PRODUCING V-GROOVE, MANUFACTURING METHOD OF V-GROOVE STRUCTURED GOODS USING THE MOLD AND OBTAINED V-GROOVE STRUCTURED GOODS

机译:生产v型槽的模具的制造方法,使用模具及获得的v型槽结构的产品的v型槽结构的产品的制造方法

摘要

PROBLEM TO BE SOLVED: To manufacture a mold by forming V-groove structure on a silicon substrate with high accuracy.;SOLUTION: A thermally oxidized film (SiO2) 22 is formed on a (100) face of the silicon substrate 20 and then the thermally oxidized film 22 is patternized by lithography and dry etching. After O2 ashing treatment is performed to the substrate for 1 minute to remove a resist, remaining resist is removed by washing with a mixture of sulfuric acid and water and then an oxidized thin film 28 is removed by etching with 1% hydrofluoric acid aqueous solution for 2 minutes. Further, etching is performed by using KOH solution of 85°C to form a V-groove 30 which has a V-shaped cross section and which stretches in a direction vertical to a paper surface. After performing callous washing, remaining mask of the oxidized film 22 is removed by etching with 7% hydrofluoric acid aqueous solution.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:通过在硅基板上高精度地形成V型槽结构来制造模具。解决方案:在(100)面上形成热氧化膜(SiO 2 )22然后,通过光刻和干法刻蚀将硅衬底20的一部分氧化,然后将热氧化膜22构图。在对基板进行O 2 灰化处理1分钟以去除抗蚀剂之后,通过用硫酸和水的混合物洗涤来去除剩余的抗蚀剂,然后通过蚀刻去除氧化的薄膜28。用1%氢氟酸水溶液处理2分钟。此外,通过使用85℃的KOH溶液进行蚀刻以形成具有V形截面并且在垂直于纸表面的方向上延伸的V形槽30。在进行无情的洗涤之后,通过用7%的氢氟酸水溶液进行蚀刻来去除氧化膜22的残留掩模。版权所有:(C)2004,日本特许厅

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