RARE EARTH ELEMENT ADDED SEMICONDUCTOR LAMINATE STRUCTURE FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DIODE USING THE SAME, SEMICONDUCTOR LASER DIODE, AND SEMICONDUCTOR OPTICAL AMPLIFIER USING THE SAME, AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a rare earth element added semiconductor laminate structure for a light emitting element in which luminosity of rare earth element is high and light emission wavelength does not fluctuate depending on the temperature, as well as a light emitting diode, semiconductor laser diode, and semiconductor optical amplifier using the same, and a manufacturing method thereof.;SOLUTION: The rare earth added semiconductor laminate structure 1 for a light emitting element has a double heterojunction structure in which p-type and n-type clad layers 3 and 4 with forbidden band width larger than an active layer 2 are laminated on both sides of the active layer 2, and where the active layer 2 is added with rare earth element or both rare earth element and oxygen. A light emitting diode, a semiconductor laser diode, and a semiconductor optical amplifier that use the rare earth added semiconductor laminate structure 1 for a light emitting element are provided. Their luminosity is high and the light emission wavelength is not dependent on the temperature.;COPYRIGHT: (C)2004,JPO