RARE EARTH ELEMENT ADDED SEMICONDUCTOR LAMINATE STRUCTURE FOR LIGHT EMITTING DEVICE USING SEPARATE CONFINEMENT STRUCTURE, LIGHT EMITTING DIODE USING THE SAME, SEMICONDUCTOR LASER DIODE, AND OPTICAL AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a rare earth element added semiconductor laminate structure for a light emitting device in which luminosity of rare earth element is high and light emission wavelength does not fluctuate depending on the temperature.;SOLUTION: The rare earth added semiconductor laminate structure 1 for a light emitting device has the separate confinement structure in which p-type and n-type clad layers 4 and 5 with forbidden band width larger than an optical guide layer 3 are laminated on both sides of a structure having an active layer 2 and the optical guide layer 3 having a film thickness nearly equal to a carrier diffusion length, and where the active layer 2 is added with rare earth element or both rare earth element and oxygen. The active layer 2 may be arranged having the film thickness nearly equal to the carrier diffusion length, or divided and arranged in the center of the optical guide layer.;COPYRIGHT: (C)2009,JPO&INPIT