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Ultra-low dielectric constant materials as intralevel or interlevel dielectrics in a semiconductor device, a method of manufacturing the same, and electronic devices comprising the same
Ultra-low dielectric constant materials as intralevel or interlevel dielectrics in a semiconductor device, a method of manufacturing the same, and electronic devices comprising the same
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机译:作为半导体器件中的层间或层间电介质的超低介电常数材料,其制造方法以及包括该材料的电子器件
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摘要
A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.
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