METHOD FOR MANUFACTURING GaN CRYSTALLINE THIN FILM BY SOLID TARGET PULSE LASER VAPOR DEPOSITION METHOD, AND THIN FILM MANUFACTURED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN-based single-crystal thin film, a GaN-based uniaxially oriented thin film and laminated films thereof and also to provide the thin films manufactured by the method.;SOLUTION: In the method for manufacturing the single-crystal thin film, the uniaxially oriented thin film and the multilayer thin films thereof, a heteroepitaxial buffer layer of ZnO is deposited by the use of a ZnO target by a solid target pulse laser vapor deposition method and then, by the use of a solid target of GaN or a mixture of GaN and another metal nitride or substances prepared by adding another element or another compound to them and turning them into semiconductors, thin films of these materials are deposited onto the ZnO buffer layer. The single-crystal thin film, the uniaxially oriented thin film and the multilayer laminated thin films thereof, which are composed of those GaN-containing materials and deposited onto the surface of a substrate by the method, can also be provided.;COPYRIGHT: (C)2004,JPO