Fabrication of Nd Cr co-doped GGG thin films for a Q-switched waveguide laser by the two-target pulsed KrF laser deposition method

摘要

Abstract: The Nd$+3$PLU$/,Cr$+4$PLU$/ co-doped GGG epitaxial thin films for self Q-switched waveguide laser has been fabricated by a two-target pulsed laser deposition method. Concentrations of Nd and Cr ion in Nd,Cr:GGG thin films are well adjusted by changing laser ablation fluences independently for Nd:GGG and Cr,Ca:GGG sintered targets. The structure of Nd,Cr:GGG thin films on YAG substrate shows a planar waveguide structure. It is confirmed that Nd$+3$PLU$/ and Cr$+4$PLU$/ ions are optically active as laser active ions and saturable absorbers around 1.06 $mu@m.!6