Use the radical organicity thin film formation manner, and the organicity thin film formation device

摘要

PROBLEM TO BE SOLVED: To provide a technique for forming an org. thin film on the activated surface of a substrate without receiving any damages. ;SOLUTION: A substrate is arranged in a vacuum vessel 12 before an org. thin film is formed on the substrate 11, the vessel is evacuated, the substrate 11 surface is irradiated with a radical by a radical gun 5, then the substrate is sent to an evacuated vacuum vessel 32, and the org. thin film is formed on the activated surface. Since the surface is treated with the radical gun 5, a transparent conductive film is hardly damaged, and even a substrate of resin is treated because a temp. rise is slight. The org. film is formed without being exposed to the atmosphere after the transparent conductive film surface is activated, hence the adhesion of the transparent conductive film to the org. thin film is improved, and an EL element good in characteristic is obtained.;COPYRIGHT: (C)1998,JPO