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Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
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机译:用于非易失性存储器集成电路的复合金属氧化物(CMO)存储器材料的低温沉积
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摘要
A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by facing target sputter deposition of the CMO memory material at relatively low temperatures that give an amorphous film. Subsequently, the CMO material can be melt and re-crystallized with a laser (laser annealing).
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