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Methods of forming semiconductor devices having field oxides in trenches and devices formed thereby
Methods of forming semiconductor devices having field oxides in trenches and devices formed thereby
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机译:形成在沟槽中具有场氧化物的半导体器件的方法以及由此形成的器件
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摘要
Semiconductor devices and methods of forming devices that have field oxides in trenches are disclosed. According to the methods, a semiconductor substrate is prepared. An upper trench is formed at a predetermined region of the semiconductor substrate and a bottom trench is formed at a bottom surface of the upper trench. A field oxide is formed to fill the bottom trench and the upper trench. At this time, the upper trench has a wider width than the bottom trench.
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