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Schottky diode having overcurrent protection and low reverse current

机译：具有过流保护和低反向电流的肖特基二极管

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摘要

The invention relates to a Schottky diode in which p-doped regions (4, 5) are incorporated in the Schottky contact area. At least one (5) of these regions (4, 5) has a greater minimum extent, in order to initiate a starting current.

机译：肖特基二极管本发明涉及一种肖特基二极管，其中在肖特基接触区中掺有p掺杂区（ 4、5 ）。这些区域（ 4、5 ）中的至少一个（ 5 ）具有更大的最小范围，以便启动启动电流。 展开▼

著录项

公开/公告号US2004173801A1

专利类型

公开/公告日2004-09-09

原文格式PDF

申请/专利权人 INFINEON TECHNOLOGIES AG;
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申请/专利号US20030741825

发明设计人 ARMIN WILLMEROTH;
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申请日2003-12-19

分类号H01L29/04;

国家 US

入库时间 2022-08-21 23:21:14

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机译：温度保护电路，例如功率晶体管，具有通过电子电路连接的肖特基二极管，肖特基二极管根据电流控制功率晶体管，电流反向流过肖特基二极管

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