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Method to provide a triple well in an epitaxially based CMOS or BiCMOS process
Method to provide a triple well in an epitaxially based CMOS or BiCMOS process
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机译:在基于外延的CMOS或BiCMOS工艺中提供三重阱的方法
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摘要
A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.
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