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Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer, and semiconductor devices including an oxide of a barrier layer
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer, and semiconductor devices including an oxide of a barrier layer
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机译:通过处理势垒金属层形成半导体器件的金属互连的方法,以及包括势垒层的氧化物的半导体器件
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摘要
A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.
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