Fabrication of metal interconnection line in semiconductor device by nitriding the metal layer to form a barrier metal layer, and forming metal interconnection line on barrier metal layer by burying the contact openings

摘要

A metal interconnection line in a semiconductor device is fabricated by forming an ohmic metal layer on the contact openings and the etched inter-layer insulation layer; forming seed layer on the ohmic metal layer; forming a metal layer on the seed layer and nitriding the metal layer to form a barrier metal layer; and forming a metal interconnection line on the barrier metal layer by burying the contact openings. Fabrication of metal interconnection line in a semiconductor device comprises forming an inter-layer insulation layer (53) on a substrate; etching predetermined regions of the inter-layer insulation layer to form a plurality of contact openings (54); forming an ohmic metal layer (55) on the contact openings and the etched inter-layer insulation layer; forming a seed layer (56) on the ohmic metal layer; forming a metal layer on the seed layer and nitriding the metal layer in a repeated number of times to form a barrier metal layer; and forming a metal interconnection line on the barrier metal layer by burying the contact openings.