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Semiconductor device, method of fabricating the same, stack-type semiconductor device, circuit board and electronic instrument

机译:半导体器件,其制造方法,堆叠型半导体器件,电路板和电子仪器

摘要

A method of fabricating a semiconductor device including: a first step of forming a through hole in a semiconductor element having electrodes on a first surface; and a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface. The conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step.
机译:一种制造半导体器件的方法,包括:第一步骤,在第一表面上具有电极的半导体元件中形成通孔;第二步骤是形成导电层,该导电层与电极电连接并且从第一表面穿过通孔的内壁设置到半导体元件的与第一表面相对的第二表面。导电层形成为在第一表面和第二表面上具有连接部分,使得在第二电极中,电极中的至少两个电极之间的距离与在第一表面和第二表面中的至少一个上的连接部分之间的距离不同。步。

著录项

  • 公开/公告号US6720661B2

    专利类型

  • 公开/公告日2004-04-13

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号US20010870710

  • 发明设计人 TERUNAO HANAOKA;KENJI WADA;

    申请日2001-06-01

  • 分类号H01L234/80;H01L235/20;H01L294/00;

  • 国家 US

  • 入库时间 2022-08-21 23:14:45

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