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Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
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机译:外延生长在缓冲硅上的非c轴取向铋层钙钛矿铁电结构
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摘要
A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
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