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Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process
Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process
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机译:与CMOS / SOI生产工艺兼容的电可擦除,可编程,非易失性存储设备
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摘要
The invention relates to an electrically erasable, non-volatile memory device, having a memory cell of the floating gate type (16), defined by a source zone, a drain zone, a channel zone (8) and a control gate zone (6), the latter being separated from the channel zone by an insulation zone (14), said five zones being implemented in a semiconductor film formed on an insulating layer (4), said memory cell being laterally insulated by one or more insulation zones (10, 12) in contact with the insulating layer.
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