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Local supply generator for a digital CMOS integrated circuit having an analog signal processing circuitry

机译：具有模拟信号处理电路的数字CMOS集成电路的本地电源生成器

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摘要

Digital CMOS integrated circuit (120) comprising an analog signal processing circuitry with a series of two or more field-effect transistors (FETs). The FETs have a maximum allowed supply voltage value (Vmax). The digital CMOS integrated circuit (120) further comprises a local charge pump (135) for generating an elevated supply voltage (Vsupplydiff) larger than the maximum allowed supply voltage value (Vmax). The local charge pump (135) is arranged such that this elevated supply voltage (Vsupplydiff) is applied to the series of two or more of the field-effect transistors (FETs).

机译：数字CMOS集成电路（ 120 ），包括具有一系列两个或多个场效应晶体管（FET）的模拟信号处理电路。 FET具有最大允许电源电压值（Vmax）。数字CMOS集成电路（ 120 ）还包括本地电荷泵（ 135 ），用于产生大于最大允许电源电压值（Vmax）的升高的电源电压（Vsupplydiff））。布置本地电荷泵（ 135 ），以便将此升高的电源电压（Vsupplydiff）施加到两个或多个场效应晶体管（FET）的串联。 展开▼

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公开/公告号US6700435B2

专利类型

公开/公告日2004-03-02

原文格式PDF

申请/专利权人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;
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申请/专利号US20020204745

发明设计人 ROLF FRIEDRICH PHILIPP BECKER;
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申请日2002-08-23

分类号G05F11/00;

国家 US

入库时间 2022-08-21 23:13:28

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