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Method of separating thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display device

机译:分离薄膜装置的方法,转移薄膜装置的方法,薄膜装置,有源矩阵基板和液晶显示装置

摘要

A separation layer (120) is provided on a substrate (100), and a thin film device (140) such as TFT is formed thereon. Separation accelerating ions such as hydrogen ions are implanted into the separation layer (120) in the course of the process for forming the thin film device (140). After the formation of the thin film device (140), the thin film device (140) is preferably joined to a transfer material (180) through an adhesive layer (160), and irradiated with laser light from the substrate side. This causes separation in the separation layer (120) by using also the action of the separation accelerating ions. The thin film device (140) is separated from the substrate (100). This permits transfer of a desired thin film device to any substrate.
机译:在基板( 100 )上设置分隔层( 120 ),并在其上形成诸如TFT的薄膜器件( 140 )。 。在形成薄膜器件( 140 )的过程中,将诸如氢离子的分离促进离子注入到分离层( 120 )中。在形成薄膜器件( 140 )之后,优选将薄膜器件( 140 )接合到转印材料( 180 )上通过粘合层( 160 ),并从基板一侧照射激光。这也通过使用分离促进离子的作用在分离层( 120 )中引起分离。薄膜器件( 140 )与基板( 100 )分离。这允许将期望的薄膜装置转移到任何基板上。

著录项

  • 公开/公告号US6700631B1

    专利类型

  • 公开/公告日2004-03-02

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号US19990403319

  • 发明设计人 TATSUYA SHIMODA;SATOSHI INOUE;

    申请日1999-10-22

  • 分类号G02F11/36;

  • 国家 US

  • 入库时间 2022-08-21 23:13:25

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