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Electron beam lithography system, electron beam lithography apparatus, and method of lithography

机译:电子束光刻系统,电子束光刻设备和光刻方法

摘要

The subject that should be solved in the present invention is to improve throughput of electron beam lithography apparatus or electron beam lithography system and lithography method used therefor. The electron beam lithography apparatus by the present invention comprises a lithography data generation part, an exposure map implementation part, and plurality of lithography data generation parts, thereby several exposure maps which are different in condition and type, are implemented in parallel. Moreover, the electron beam lithography apparatus by present invention has a construction to compare outputs from the lithography data generation parts. Moreover, the electron beam lithography system by present invention has a construction to use lithography data formed with the lithography data generation parts of one of the electron beam lithography apparatuses with other of the electron beam lithography apparatuses.
机译:在本发明中应解决的主题是提高电子束光刻设备或电子束光刻系统的吞吐量以及所使用的光刻方法。本发明的电子束光刻设备包括光刻数据生成部,曝光图实现部和多个光刻数据生成部,从而并行地实现条件和类型不同的多个曝光图。另外,本发明的电子束光刻装置具有比较来自光刻数据生成部的输出的结构。此外,本发明的电子束光刻系统具有将由其中一个电子束光刻设备的光刻数据生成部分形成的光刻数据与其他电子束光刻设备一起使用的构造。

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