ELECTRON BEAM LITHOGRAPHY APPARATUS, ELECTRON BEAM LITHOGRAPHY SYSTEM, AND METHOD OF LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To provide an electron beam lithography apparatus, an electron beam lithography system and a lithography method, which can improve the throughput of the electron beam lithography apparatus, the electron beam lithography system, and the lithography method.;SOLUTION: The electron beam lithography apparatus, which generates lithography data which compensates the proximity effect of electron beam, and the like, is equipped with a plurality of lithography data creating parts 12a, 12b-12n which has a lithography data generating means 13, a light exposure map implementation means 15, and an electron beam correction means 14. The impletation of a plurality of light exposure maps which are different in condition and type is performed in parallel. Thereby, the operating efficiency of the electron beam lithography system is improved. And also the mistake in making the data can be detected by making and comparing the same drawing data in a plurality of the generating parts. Therefore, the reliability of the system is improved. Furthermore, the throughput is improved by connecting between two sets of the electron beam lithography apparatuses through a data transmission means, transmitting the data generated in the first apparatus to the second apparatus, and carrying out pattern drawing.;COPYRIGHT: (C)2004,JPO&NCIPI