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TFT-LCD having dummy gate electrode and dummy gate insulator

机译:具有伪栅电极和伪栅绝缘体的TFT-LCD

摘要

A liquid crystal display and a method for fabricating the same include a first substrate having an active layer with source/drain regions formed therein, a gate line and a data line extending in directions perpendicular to each other formed thereon, a dummy gate insulating film and a dummy gate electrode both formed on the first substrate in fixed patterns isolated from the gate line, an interlayer insulating film on the first substrate inclusive of the dummy gate electrode with a step, a drain electrode formed on the interlayer insulating film to overlap on upper regions of the dummy gate electrode so as to be in contact with the drain region and have a step to the data line, the data line formed on the interlayer insulating having a step to the drain electrode, a passivation film formed on the interlayer insulating film inclusive of the dummy gate electrode and the data line, a contact hole formed to expose the drain electrode overlapped with the dummy gate electrode, and a pixel electrode overlapping upper edges of the data line and in contact with the drain electrode through the contact hole, thereby reducing a vertical crosstalk while a large aperture is achieved, to improve the picture quality.
机译:液晶显示器及其制造方法,包括:第一基板,其上形成有有源层,有源层上形成有源/漏区;栅极线和数据线,其形成在彼此垂直的方向上;伪栅极绝缘膜,以及均以与栅极线隔离的固定图案形成在第一基板上的虚设栅电极,具有台阶的包括虚设栅电极的第一基板上的层间绝缘膜,形成在层间绝缘膜上以在上方重叠的漏极虚设栅电极的与漏极区域接触并与数据线具有台阶的区域,形成在层间绝缘体上的数据线与漏极具有台阶,在层间绝缘膜上形成的钝化膜包括虚设栅电极和数据线,形成为暴露与虚设栅电极重叠的漏电极的接触孔和像素元件电极与数据线的上边缘重叠,并通过接触孔与漏电极接触,从而在实现大孔径的同时减少了垂直串扰,从而提高了图像质量。

著录项

  • 公开/公告号US6661477B2

    专利类型

  • 公开/公告日2003-12-09

    原文格式PDF

  • 申请/专利权人 LG.PHILIPS LCD CO. LTD.;

    申请/专利号US20010892648

  • 发明设计人 JAE DEOK PARK;JU CHEON YEO;YONG MIN HA;

    申请日2001-06-28

  • 分类号G02F11/36;G02F11/30;

  • 国家 US

  • 入库时间 2022-08-21 23:12:33

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