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METHOD AND STRUCTURE FOR CALIBRATING SCATTEROMETRY-BASED METROLOGY TOOL USED TO MEASURE DIMENSIONS OF FEATURES ON A SEMICONDUCTOR DEVICE

机译:校准基于折光法的度量工具的方法和结构,该度量工具用于测量半导体器件上的特征尺寸

摘要

Title: METHOD AND STRUCTURE FOR CALIBRATING SCATTEROMETRY-BASED METROLOGY TOOL USED TO MEASURE DIMENSIONS OF FEATURES ON A SEMICONDUCTOR DEVICE[err]Abstract: The present invention is generally directed to a method and a structure for calibrating a scatterometry-based metrology tool (74) used to measure dimensions of features on a semiconductor device. In one illustrative embodiment, the method comprisesmeasuring a critical dimension of at least one production feature formed above a wafer (31) using a scatterometry tool (74), measuring at least one of a plurality of grating structures (60) formed above the wafer (31) using the scatterometry tool (74), each of the grating structures (60) having a different critical dimension, and correcting the measured critical dimension of the at least one production features based upon the measurement of the at least one grating structure (60). In further embodiments, the method comprises forming a plurality of production features above a wafer (31), forming a plurality of grating structures (60) above the wafer (31), each of the grating structures (60) comprised of a plurality of features (38A) each having a target critical dimension that thereby defines a critical dimension of the grating structure (60), each of the grating structures (60) having a different critical dimension, measuring a critical dimension of at least one of the production features using a scatterometry tool (74), measuring at least one of the grating structures (60) using the scatterometry tool (74) to determine a measured critical dimension of at least one feature of theat least one grating structure (60), and correcting the measured critical dimension of the at least one production features based upon a comparison between the measured critical dimension of the at least one feature (38A) on the at least one grating structure (60) and the target critical dimension of the feature (38A) on the at least one grating structure (60).
机译:标题:校准基于比色法的度量工具的方法和结构,该度量工具用于测量半导体器件上的特征尺寸[呃]摘要:本发明总体上涉及一种用于校准基于散射测量的度量工具(74)的方法和结构,该度量用于测量半导体器件上的特征的尺寸。在一说明性实施例中,该方法包括使用散射测量工具(74)测量形成在晶片(31)上方的至少一个生产特征的临界尺寸,使用散射测量工具测量形成在晶片(31)上方的多个光栅结构(60)中的至少一个( 74),每个光栅结构(60)具有不同的临界尺寸,并校正至少一个的测得的临界尺寸基于至少一个光栅结构(60)的测量的生产特征。在进一步的实施例中,该方法包括在晶片(31)上方形成多个生产特征,在晶片(31)上方形成多个光栅结构(60),每个光栅结构(60)包括多个特征。 (38A)各自具有目标临界尺寸,从而限定光栅结构(60)的临界尺寸,每个光栅结构(60)具有不同的临界尺寸,使用散射测量工具(74)测量至少一个生产特征的临界尺寸,测量至少一个使用散射测量工具(74)确定光栅结构(60)的至少一个特征的测量临界尺寸至少一个光栅结构(60),并基于在至少一个光栅结构(60)上测得的至少一个特征(38A)的临界尺寸之间的比较,校正至少一个生产特征的测得的临界尺寸至少一个光栅结构(60)上的特征(38A)的目标临界尺寸。

著录项

  • 公开/公告号SG106289A1

    专利类型

  • 公开/公告日2004-10-29

    原文格式PDF

  • 申请/专利权人 ADVANCED MICRO DEVICES INC.;

    申请/专利号SG2004048245

  • 发明设计人 NARIMAN HOMI E.;

    申请日2002-12-17

  • 分类号H01L21/66;

  • 国家 SG

  • 入库时间 2022-08-21 23:07:50

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