FERROMAGNETIC IV GROUP BASED SEMICONDUCTOR, FERROMAGNETIC III-V GROUP BASED COMPOUND SEMICONDUCTOR, OR FERROMAGNETIC II-IV GROUP BASED COMPOUND SEMICONDUCTOR, AND METHOD FOR ADJUSTING THEIR FERROMAGNETIC CHARACTERISTICS

摘要

A ferromagnetic semiconductor, which comprises a IV Group based semiconductor, a III-V Group based compound semiconductor, or a II-VI Group based compound semiconductor doped with at least one metal selected from the group consisting of the rare earth metal elements of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and a method for adjusting ferromagnetic characteristics of the ferromagnetic semiconductor which comprises adjusting the concentration of a rare earth metal element, or combining two or more metals of the above rare earth metals, or further adding at least one of a p-type dopant and a n-type dopant. A IV Group based semiconductor, a III-V Group based compound semiconductor and a II-VI Group based compound semiconductor transmit a light beam, and the method allows the preparation of a semiconductor which transmits a light beam and exhibits stable ferromagnetic characteristics.