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Lateral power MOSFET having metal strap layer to reduce distributed resistance and method of fabricating the same
Lateral power MOSFET having metal strap layer to reduce distributed resistance and method of fabricating the same
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机译:具有金属表带层以减小分布电阻的横向功率MOSFET及其制造方法
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摘要
To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus. IMAGE IMAGE IMAGE
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