METHOD FOR P-TYPE DOPING WIDE BAND GAP OXIDE SEMICONDUCTORS

摘要

A method of p-type doping in Zn0 is provided. The method includes forming an acceptor-doped material having Zn0 under reducing conditions, thereby insuring a high donor density. Also, the specimens of the acceptor-doped material are annealed at intermediate temperatures under oxidizing conditions so as to remove intrinsic donors and activate impurity acceptors.