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Semiconductor device with reverse conducting faculty
Semiconductor device with reverse conducting faculty
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机译:具有反导能力的半导体器件
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摘要
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n- silicon substrate 101, p+ gate regions 102, 104 formed in one surface of the substrate, a p+ anode region 111 formed in the other surface of the substrate, a main diode section 134 having a cathode region formed by the silicon substrate and an anode region 131 formed in the one surface of the substrate, and a series arrangement 145 of diodes including plural p+ anode regions 142, plural n+ cathode contact regions 143 formed in the first surface of the substrate, and plural conductive layers 144 connecting these anode regions and cathode contact regions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode 110 and an anode electrode 113 of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.
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